Manufacture and Analysis of N-type Semiconductor Layer and Perovskite Layer in Hybrid Perovskite Solar Cell
Peng, Bo (2019-09-27)
Manufacture and Analysis of N-type Semiconductor Layer and Perovskite Layer in Hybrid Perovskite Solar Cell
Peng, Bo
(27.09.2019)
Julkaisu on tekijänoikeussäännösten alainen. Teosta voi lukea ja tulostaa henkilökohtaista käyttöä varten. Käyttö kaupallisiin tarkoituksiin on kielletty.
avoin
Julkaisun pysyvä osoite on:
https://urn.fi/URN:NBN:fi-fe2019101532860
https://urn.fi/URN:NBN:fi-fe2019101532860
Tiivistelmä
This thesis work describes the experiments about building the first two layers of MethylAmmonium Lead Iodide perovskite solar cell and the conclusions made upon it. Different methods were used to get the optimized results. Obtained films were analyzed qualitatively by IR and Raman spectroscopy. Electrochemistry and spin coating are introduced into the experiments and showed a good result. Repeatable and stable layers are able to be obtained by detailed manufacture methods.