Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

Abstract

We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8-hydroxyquinolinato) aluminum (Alq(3)) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%-30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.