Studies of Hydrogen Atom Recombination in Solid Hydrogen Deuteride

Wetzel, C. K.; Lee, D. M.; Sheludiakov, S.; Ahokas, J.; Vasiliev, S.; Khmelenko, V. V.
Studies of Hydrogen Atom Recombination in Solid Hydrogen Deuteride

Wetzel, C. K.
Lee, D. M.
Sheludiakov, S.
Ahokas, J.
Vasiliev, S.
Khmelenko, V. V.

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SPRINGER/PLENUM PUBLISHERS
doi:10.1007/s10909-025-03281-8
URI
https://doi.org/10.1007/s10909-025-03281-8
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Julkaisun pysyvä osoite on:
https://urn.fi/URN:NBN:fi-fe2025082792831
Tiivistelmä
We used the method of electron spin resonance (ESR) to investigate the temperature-dependent recombination rate of H atoms in solid molecular hydrogen deuteride (HD). A 1.5 mu m thick solid molecular HD film was deposited at a rate of 2 monolayer/s, onto a gold surface maintained at T=1.5 K. H and D atoms were accumulated in the film by maintaining radio-frequency electric discharge above the film for 19 days. After further storage of the sample for 48 h, at T < 1 K, the D atom signal vanished. The concentration of H atoms was monitored as the sample was warmed stepwise from 1.1 K to 2.8 K. The recombination rate of H atoms in solid HD was found to be proportional to temperature in this range.
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