Performance of silicon photomultipliers from room temperature to below 200 mK

dc.contributor.authorHanski, Otto
dc.contributor.authorKiilerich, Tom
dc.contributor.authorAhopelto, Sampsa
dc.contributor.authorSemakin, Aleksei
dc.contributor.authorAhokas, Janne
dc.contributor.authorDvornichenko, Viacheslav
dc.contributor.authorVasiliev, Sergey
dc.contributor.organizationfi=Wihurin fysiikantutkimuslaboratorio|en=Wihuri Physical Laboratory|
dc.contributor.organizationfi=fysiikan ja tähtitieteen laitos|en=Department of Physics and Astronomy|
dc.contributor.organization-code1.2.246.10.2458963.20.26581883332
dc.contributor.organization-code1.2.246.10.2458963.20.55477946762
dc.converis.publication-id499722334
dc.converis.urlhttps://research.utu.fi/converis/portal/Publication/499722334
dc.date.accessioned2026-01-21T14:37:33Z
dc.date.available2026-01-21T14:37:33Z
dc.description.abstract<p>We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90 mK to 40 K and compare them to room-temperature results. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics, were tested. Operating voltage ranges, dark count rates, afterpulsing effects and photon detection efficiencies (PDE) were determined with illumination by 275- and 470-nm light fed into the cryostat via an optical fiber. A cryogenic shutter provided a true dark condition, where thermal radiation from room temperature is shielded and the thermal excitations in the chips are frozen. A second tunneling breakdown was observed at this condition, which substantially limits the operating voltage range for the temperatures 20-30 K. Below ∼5 K, both SiPMs recover to an operating overvoltage range of 3-5 V. We found the chips function through the entire tested temperature range and are capable of withstanding thermal cycling with no major performance degradation.</p>
dc.identifier.eissn1434-6079
dc.identifier.jour-issn1434-6060
dc.identifier.olddbid213483
dc.identifier.oldhandle10024/196501
dc.identifier.urihttps://www.utupub.fi/handle/11111/55483
dc.identifier.urlhttps://link.springer.com/article/10.1140/epjd/s10053-025-01034-6
dc.identifier.urnURN:NBN:fi-fe202601216638
dc.language.isoen
dc.okm.affiliatedauthorHanski, Otto
dc.okm.affiliatedauthorKiilerich, Tom
dc.okm.affiliatedauthorSemakin, Aleksei
dc.okm.affiliatedauthorAhokas, Janne
dc.okm.affiliatedauthorDvornichenko, Viacheslav
dc.okm.affiliatedauthorVasiliev, Sergey
dc.okm.discipline114 Physical sciencesen_GB
dc.okm.discipline114 Fysiikkafi_FI
dc.okm.internationalcopublicationnot an international co-publication
dc.okm.internationalityInternational publication
dc.okm.typeA1 ScientificArticle
dc.publisherSPRINGER
dc.publisher.countryFranceen_GB
dc.publisher.countryRanskafi_FI
dc.publisher.country-codeFR
dc.publisher.placeNEW YORK
dc.relation.articlenumber89
dc.relation.doi10.1140/epjd/s10053-025-01034-6
dc.relation.ispartofjournalEuropean Physical Journal D
dc.relation.issue7
dc.relation.volume79
dc.source.identifierhttps://www.utupub.fi/handle/10024/196501
dc.titlePerformance of silicon photomultipliers from room temperature to below 200 mK
dc.year.issued2025

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