A method to enhance thickness and current-carrying capacity of BZO-doped YBCO multilayers

dc.contributor.authorAye, M. M.
dc.contributor.authorRivasto, E.
dc.contributor.authorRijckaert, H.
dc.contributor.authorHuhtinen, H.
dc.contributor.authorPaturi, P.
dc.contributor.organizationfi=Wihurin fysiikantutkimuslaboratorio|en=Wihuri Physical Laboratory|
dc.contributor.organization-code1.2.246.10.2458963.20.26581883332
dc.converis.publication-id477049617
dc.converis.urlhttps://research.utu.fi/converis/portal/Publication/477049617
dc.date.accessioned2025-08-27T22:23:22Z
dc.date.available2025-08-27T22:23:22Z
dc.description.abstractThis study demonstrates a significant enhancement in the in-field critical current density and its isotropy in BZOdoped YBCO multilayer structures, achieved through improvements in the crystalline quality of YBCO, which extend the electron mean free path. The incorporation of undoped YBCO, alongside alternating BZO-doped and Ca-doped YBCO layers, revealed that the Ca-doped intermediate layer positively influenced the interface quality, promoting better growth in the subsequent layers. These improvements also enabled an increase in total film thickness, thereby enhancing the current-carrying capacity. Furthermore, the paper discusses the mechanisms behind these enhancements and presents a model explaining how nanorod pinning centres in different layers affect vortex pinning behavior. These insights offer valuable guidance for designing future YBCO coated conductor structures.
dc.format.pagerange1
dc.format.pagerange6
dc.identifier.eissn2378-7074
dc.identifier.jour-issn1051-8223
dc.identifier.olddbid202092
dc.identifier.oldhandle10024/185119
dc.identifier.urihttps://www.utupub.fi/handle/11111/45691
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10762870
dc.identifier.urnURN:NBN:fi-fe2025082789669
dc.language.isoen
dc.okm.affiliatedauthorAye, Moe
dc.okm.affiliatedauthorRivasto, Elmeri
dc.okm.affiliatedauthorHuhtinen, Hannu
dc.okm.affiliatedauthorPaturi, Petriina
dc.okm.discipline114 Physical sciencesen_GB
dc.okm.discipline114 Fysiikkafi_FI
dc.okm.internationalcopublicationinternational co-publication
dc.okm.internationalityInternational publication
dc.okm.typeA1 ScientificArticle
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.publisher.countryUnited Statesen_GB
dc.publisher.countryYhdysvallat (USA)fi_FI
dc.publisher.country-codeUS
dc.relation.doi10.1109/TASC.2024.3504411
dc.relation.ispartofjournalIEEE Transactions on Applied Superconductivity
dc.source.identifierhttps://www.utupub.fi/handle/10024/185119
dc.titleA method to enhance thickness and current-carrying capacity of BZO-doped YBCO multilayers
dc.year.issued2024

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