Compact Model and Design Considerations of an Ion-Sensitive Floating Gate FET

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dc.contributor.authorMatti Kaisti
dc.contributor.authorQi Zhang
dc.contributor.authorKalle Levon
dc.contributor.organizationfi=kieli- ja puheteknologia|en=Language and Speech Technology|
dc.contributor.organization-code1.2.246.10.2458963.20.47465613983
dc.converis.publication-id18281828
dc.converis.urlhttps://research.utu.fi/converis/portal/Publication/18281828
dc.date.accessioned2022-10-28T14:26:38Z
dc.date.available2022-10-28T14:26:38Z
dc.format.pagerange321
dc.format.pagerange326
dc.identifier.jour-issn0925-4005
dc.identifier.olddbid188295
dc.identifier.oldhandle10024/171389
dc.identifier.urihttps://www.utupub.fi/handle/11111/43651
dc.identifier.urnURN:NBN:fi-fe2021042716261
dc.language.isoen
dc.okm.affiliatedauthorKaisti, Matti
dc.okm.discipline116 Chemical sciencesen_GB
dc.okm.discipline116 Kemiafi_FI
dc.okm.internationalcopublicationinternational co-publication
dc.okm.internationalityInternational publication
dc.okm.typeA1 ScientificArticle
dc.publisherELSEVIER SCIENCE SA
dc.publisher.countrySwitzerlanden_GB
dc.publisher.countrySveitsifi_FI
dc.publisher.country-codeCH
dc.relation.doi10.1016/j.snb.2016.10.051
dc.relation.ispartofjournalSensors and Actuators B: Chemical
dc.relation.volume241
dc.source.identifierhttps://www.utupub.fi/handle/10024/171389
dc.titleCompact Model and Design Considerations of an Ion-Sensitive Floating Gate FET
dc.year.issued2017

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