Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature

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dc.contributor.authorJ. Järvinen
dc.contributor.authorJ. Ahokas
dc.contributor.authorS. Sheludyakov
dc.contributor.authorO. Vainio
dc.contributor.authorD. Zvezdov
dc.contributor.authorL. Lehtonen
dc.contributor.authorL. Vlasenko
dc.contributor.authorS. Vasiliev
dc.contributor.organizationfi=Wihurin fysiikantutkimuslaboratorio|en=Wihuri Physical Laboratory|
dc.contributor.organizationfi=kvanttioptiikan laboratorio|en=Laboratory of Quantum Optics|
dc.contributor.organization-code1.2.246.10.2458963.20.26581883332
dc.contributor.organization-code1.2.246.10.2458963.20.63398691327
dc.contributor.organization-code2606701
dc.contributor.organization-code2606707
dc.converis.publication-id19070765
dc.converis.urlhttps://research.utu.fi/converis/portal/Publication/19070765
dc.date.accessioned2022-10-28T14:41:51Z
dc.date.available2022-10-28T14:41:51Z
dc.description.abstract<p>We present the results of experiments on dynamic nuclear polar-<br />ization and relaxation of 75 As in silicon crystals. Experiments are performed<br />in strong magnetic fields of 4.6 T and temperatures below 1 K. At these con-<br />ditions donor electron spins are fully polarized, and the allowed and forbidden<br />ESR transitions are well resolved. We demonstrate effective nuclear polar-<br />ization of 75 As nuclei via the Overhauser effect on the time scale of several<br />hundred seconds. Excitation of the forbidden transitions leads to a polariza-<br />tion through the solid effect. The relaxation rate of donor nuclei has strong<br />temperature dependence characteristic of Orbach process.<br /></p>
dc.format.pagerange473
dc.format.pagerange483
dc.identifier.eissn1613-7507
dc.identifier.jour-issn0937-9347
dc.identifier.olddbid189742
dc.identifier.oldhandle10024/172836
dc.identifier.urihttps://www.utupub.fi/handle/11111/44795
dc.identifier.urnURN:NBN:fi-fe2021042716626
dc.language.isoen
dc.okm.affiliatedauthorJärvinen, Jarno
dc.okm.affiliatedauthorAhokas, Janne
dc.okm.affiliatedauthorSheludiakov, Sergei
dc.okm.affiliatedauthorVainio, Otto
dc.okm.affiliatedauthorZvezdov, Denis
dc.okm.affiliatedauthorLehtonen, Lauri
dc.okm.affiliatedauthorVasiliev, Sergey
dc.okm.discipline114 Physical sciencesen_GB
dc.okm.discipline114 Fysiikkafi_FI
dc.okm.internationalcopublicationinternational co-publication
dc.okm.internationalityInternational publication
dc.okm.typeA1 ScientificArticle
dc.publisherSPRINGER WIEN
dc.publisher.countryAustriaen_GB
dc.publisher.countryItävaltafi_FI
dc.publisher.country-codeAT
dc.relation.doi10.1007/s00723-017-0875-z
dc.relation.ispartofjournalApplied Magnetic Resonance
dc.relation.issue5
dc.relation.volume48
dc.source.identifierhttps://www.utupub.fi/handle/10024/172836
dc.titleDynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature
dc.year.issued2017

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