Construction of Reverse Type-II InP/ZnxCd1–xS Core/Shell Quantum Dots with Low Interface Strain to Enhance Photocatalytic Hydrogen Evolution

dc.contributor.authorXu, Dongzi
dc.contributor.authorShen, Li-Lei
dc.contributor.authorQin, Zhi-Kai
dc.contributor.authorYan, Shuo
dc.contributor.authorWang, Nianxing
dc.contributor.authorWang, Jingui
dc.contributor.authorGao, Yu-Ji
dc.contributor.organizationfi=materiaalitekniikka|en=Materials Engineering|
dc.contributor.organization-code1.2.246.10.2458963.20.80931480620
dc.converis.publication-id457346322
dc.converis.urlhttps://research.utu.fi/converis/portal/Publication/457346322
dc.date.accessioned2025-08-28T00:23:45Z
dc.date.available2025-08-28T00:23:45Z
dc.description.abstract<p>The InP-based quantum dots (QDs) have attracted much attention in the field of photocatalytic H<sub>2</sub> evolution. However, a shell should be used for InP-based photocatalytic systems to passivate the numerous surface defects. Different from the traditional InP-based core/shell QDs with Type-I or Type-II band alignment, herein, the "reverse Type-II" core/shell QDs in which both the conduction and valence bands of shell materials are more negative than those of core materials have been well-designed by regulating the ratio of Cd/Zn of the alloyed Zn<em><sub>x</sub></em>Cd<sub>1-<em>x</em></sub>S shell. The reverse Type-II band alignment would realize the spatial separation of photogenerated carriers. More importantly, the photogenerated holes tend to rest on the shell in the reverse Type-II QDs, which facilitate hole transfer to the surface, the rate-determining step for solar H<sub>2</sub> evolution using QDs. Therefore, the obtained InP/Zn<sub>0.25</sub>Cd<sub>0.75</sub>S core/shell QDs exhibit superior photocatalytic activity and stability under visible light irradiation. The rate of solar H<sub>2</sub> evolution reaches 376.19 μmol h<sup>-1</sup> mg<sup>-1</sup> at the initial 46 h, with a turnover number of ∼2,157,000 per QD within 70 h irradiation.</p>
dc.format.pagerange12582
dc.format.pagerange12592
dc.identifier.eissn1520-510X
dc.identifier.jour-issn0020-1669
dc.identifier.olddbid205637
dc.identifier.oldhandle10024/188664
dc.identifier.urihttps://www.utupub.fi/handle/11111/56323
dc.identifier.urlhttps://pubs.acs.org/doi/full/10.1021/acs.inorgchem.4c01503
dc.identifier.urnURN:NBN:fi-fe2025082787069
dc.language.isoen
dc.okm.affiliatedauthorWang, Nianxing
dc.okm.discipline116 Chemical sciencesen_GB
dc.okm.discipline221 Nanotechnologyen_GB
dc.okm.discipline116 Kemiafi_FI
dc.okm.discipline221 Nanoteknologiafi_FI
dc.okm.internationalcopublicationinternational co-publication
dc.okm.internationalityInternational publication
dc.okm.typeA1 ScientificArticle
dc.publisherAmerican Chemical Society
dc.publisher.countryUnited Statesen_GB
dc.publisher.countryYhdysvallat (USA)fi_FI
dc.publisher.country-codeUS
dc.relation.doi10.1021/acs.inorgchem.4c01503
dc.relation.ispartofjournalInorganic Chemistry
dc.relation.issue27
dc.relation.volume63
dc.source.identifierhttps://www.utupub.fi/handle/10024/188664
dc.titleConstruction of Reverse Type-II InP/ZnxCd1–xS Core/Shell Quantum Dots with Low Interface Strain to Enhance Photocatalytic Hydrogen Evolution
dc.year.issued2024

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