On-die CMOS temperature sensors
Auranen, Antti (2023-12-07)
On-die CMOS temperature sensors
(07.12.2023)
Julkaisu on tekijänoikeussäännösten alainen. Teosta voi lukea ja tulostaa henkilökohtaista käyttöä varten. Käyttö kaupallisiin tarkoituksiin on kielletty.
avoin
Julkaisun pysyvä osoite on:
https://urn.fi/URN:NBN:fi-fe20231215154970
https://urn.fi/URN:NBN:fi-fe20231215154970
Tiivistelmä
Temperature changes can have an impact on the reliability and functioning of sensitive integrated circuits. In this thesis an analog DTMOS transistor temperature
was designed and laid out in 22 nm CMOS fabrication process using Cadence Virtuoso electrical design automation suite. The design was verifed and validated using
Cadence Spectre electrical simulation software and the simulation results were analyzed and compared to previous sensor designs. The new design was found to be less
power hungry but slightly less accurate than the original design. The new design
also showed a signifcant improvement in operating voltage resilience compared to a
previous design used at LG Electronics Finland Lab Oy. Over all the design goals
were met and the sensor is ready to be added to be a part of a future integrated
circuit.
was designed and laid out in 22 nm CMOS fabrication process using Cadence Virtuoso electrical design automation suite. The design was verifed and validated using
Cadence Spectre electrical simulation software and the simulation results were analyzed and compared to previous sensor designs. The new design was found to be less
power hungry but slightly less accurate than the original design. The new design
also showed a signifcant improvement in operating voltage resilience compared to a
previous design used at LG Electronics Finland Lab Oy. Over all the design goals
were met and the sensor is ready to be added to be a part of a future integrated
circuit.